Chip AI consultant
Technical parameters/breakdown voltage: 30 V|28.5 V
Technical parameters/dissipated power: 400 W
Technical parameters/clamp voltage: 41.5 V
Technical parameters/Maximum reverse voltage (Vrrm): 25.6V
Technical parameters/test current: 1 mA
Technical parameters/Maximum forward surge current (Ifsm): 40 A
Technical parameters/peak pulse power: 400 W
Technical parameters/forward voltage (Max): 3 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -50 ℃
Technical parameters/operating temperature: -50℃ ~ 175℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-15
External dimensions/packaging: DO-15
Other/Product Lifecycle: Active
Other/Packaging Methods: Ammo Pack
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZW04-256B
|
DB Lectro | 功能相似 |
Diode: transil; 400W; 300V; bidirectional; ±5%; DO15
|
|||
|
BZW04-256B
|
Galaxy Semi-Conductor | 功能相似 |
Diode: transil; 400W; 300V; bidirectional; ±5%; DO15
|
|||
BZW04-256B
|
Taiwan Semiconductor | 功能相似 | DO-41-2 |
Diode: transil; 400W; 300V; bidirectional; ±5%; DO15
|
||
BZW04-26
|
EIC | 类似代替 | DO-204AL |
DO-15 25.6V 400W
|
||
BZW04-26
|
Diotec Semiconductor | 类似代替 | DO-15 |
DO-15 25.6V 400W
|
||
BZW04-26
|
Taiwan Semiconductor | 类似代替 | DO-41 |
DO-15 25.6V 400W
|
||
|
BZW04-26
|
Galaxy Semi-Conductor | 类似代替 |
DO-15 25.6V 400W
|
|||
|
BZW04-26
|
DB Lectro | 类似代替 |
DO-15 25.6V 400W
|
|||
|
BZW04-26B
|
Edal Industries Inc | 完全替代 |
DO-15 25.6V 400W
|
|||
|
BZW04-26B
|
General Semiconductor | 完全替代 |
DO-15 25.6V 400W
|
|||
|
BZW04-26B
|
Galaxy Semi-Conductor | 完全替代 |
DO-15 25.6V 400W
|
|||
BZW04-26B
|
ST Microelectronics | 完全替代 | DO-15-2 |
DO-15 25.6V 400W
|
||
BZW04-26B
|
Multicomp | 完全替代 | DO-41 |
DO-15 25.6V 400W
|
||
|
BZW04P256B
|
Galaxy Semi-Conductor | 功能相似 |
DO-41 256V 400W
|
|||
|
BZW04P256B
|
Vishay Semiconductor | 功能相似 | DO-41 |
DO-41 256V 400W
|
||
|
BZW04P256B
|
EIC | 功能相似 | DO-41 |
DO-41 256V 400W
|
||
|
|
Vishay Semiconductor | 功能相似 |
Trans Voltage Suppressor Diode, 243V V(RWM), Bidirectional
|
|||
P4KE300C
|
Leshan Radio | 功能相似 | DO-41 |
Trans Voltage Suppressor Diode, 243V V(RWM), Bidirectional
|
||
P4KE300C
|
Diotec Semiconductor | 功能相似 | DO-15 |
Trans Voltage Suppressor Diode, 243V V(RWM), Bidirectional
|
||
|
|
Comchip Technology | 功能相似 |
Trans Voltage Suppressor Diode, 243V V(RWM), Bidirectional
|
|||
|
|
Panjit | 功能相似 | DO-41 |
Trans Voltage Suppressor Diode, 243V V(RWM), Bidirectional
|
||
P4KE300C
|
Littelfuse | 功能相似 | DO-204AL |
Trans Voltage Suppressor Diode, 243V V(RWM), Bidirectional
|
||
|
P4KE300C
|
Good-Ark Electronics | 功能相似 |
Trans Voltage Suppressor Diode, 243V V(RWM), Bidirectional
|
|||
|
|
DOWO | 功能相似 | DO-41 |
硅雪崩二极管 - 400W轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
|
||
P4KE30A
|
JXND | 功能相似 | DO-41 |
硅雪崩二极管 - 400W轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
|
||
|
|
Micro Commercial Components | 功能相似 | DO-41 |
硅雪崩二极管 - 400W轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
|
||
|
|
CREATEK | 功能相似 | DO-41 |
硅雪崩二极管 - 400W轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
|
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