Technical parameters/rated power: 3.25 W
Technical parameters/dissipated power: 1.3 W
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 200 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 188 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 3250 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-57
External dimensions/length: 4 mm
External dimensions/width: 3.6 mm
External dimensions/height: 3.6 mm
External dimensions/packaging: SOD-57
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZT03C200-TAP
|
VISHAY | 类似代替 | SOD-57 |
齐纳二极管 1.3W,BZT03 系列,Vishay Semiconductor ### 齐纳二极管,Vishay Semiconductor
|
||
BZT03C200-TAP
|
Vishay Semiconductor | 类似代替 | SOD-57 |
齐纳二极管 1.3W,BZT03 系列,Vishay Semiconductor ### 齐纳二极管,Vishay Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review