Technical parameters/breakdown voltage: 51.0 V
Technical parameters/forward voltage: 1.2V @200mA
Technical parameters/dissipated power: 2.3 W
Technical parameters/test current: 10 mA
Technical parameters/voltage regulation value: 51 V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-219AB-2
External dimensions/length: 3.9 mm
External dimensions/width: 1.9 mm
External dimensions/height: 1.08 mm
External dimensions/packaging: DO-219AB-2
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZD27C51P-HE3-08
|
Vishay Semiconductor | 类似代替 | DO-219AB-2 |
稳压二极管 ZENER DIODE SMF DO219-HE3
|
||
BZD27C51P-HE3-08
|
VISHAY | 类似代替 | DO-219AB |
稳压二极管 ZENER DIODE SMF DO219-HE3
|
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