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Model BUZ72A
Description N - Channel enhanced power MOS transistor N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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Brand: ST Microelectronics
Packaging TO-220
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Packaging method Tube, Rail
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2094) Minimum order quantity(1)
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Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube, Rail

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BUZ72 BUZ72 Siemens Semiconductor 功能相似 SFM
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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BUZ72 BUZ72 Infineon 功能相似 TO-220
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PDF
BUZ72A BUZ72A ST Microelectronics 功能相似 TO-220
SIPMOS功率晶体管 SIPMOS Power Transistor
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