Technical parameters/breakdown voltage: 130 V
Technical parameters/forward voltage: 1.2V @200mA
Technical parameters/dissipated power: 800 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 130 V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-219AB
External dimensions/packaging: DO-219AB
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZD27C130P-E3-08
|
Vishay Semiconductor | 完全替代 | DO-219AB |
VISHAY BZD27C130P-E3-08 Zener Single Diode, 130V, 800mW, DO-219AB, 2Pins, 150℃
|
||
BZD27C130P-E3-08
|
Vishay Intertechnology | 完全替代 | DO-219AB |
VISHAY BZD27C130P-E3-08 Zener Single Diode, 130V, 800mW, DO-219AB, 2Pins, 150℃
|
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