Technical parameters/rated current: 3.50 A
Technical parameters/forward voltage: 1.1V @5A
Technical parameters/reverse recovery time: 30 ns
Technical parameters/forward current: 3.5 A
Technical parameters/Maximum forward surge current (Ifsm): 90 A
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-64
External dimensions/length: 4 mm
External dimensions/width: 4.3 mm
External dimensions/height: 4.3 mm
External dimensions/packaging: SOD-64
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Automotive, Aerospace, Defence, Military
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standards/military grade: Yes
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYV28-100-TAP
|
Vishay Semiconductor | 完全替代 | SOD-64 |
VISHAY BYV28-100-TAP 快速/超快二极管, AEC-Q101, 单, 110 V, 3.5 A, 1.1 V, 30 ns, 90 A
|
||
MUR410G
|
ON Semiconductor | 功能相似 | DO-201AD |
ON SEMICONDUCTOR MUR410G 快速/超快二极管, 单, 100 V, 4 A, 890 mV, 35 ns, 125 A
|
||
MUR410G
|
Micro Commercial Components | 功能相似 | DO-201AD |
ON SEMICONDUCTOR MUR410G 快速/超快二极管, 单, 100 V, 4 A, 890 mV, 35 ns, 125 A
|
||
MUR410RLG
|
ON Semiconductor | 功能相似 | DO-201AD |
ON SEMICONDUCTOR MUR410RLG. 超快二极管, 4A, 100V, 轴向引线, 整卷
|
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