Technical parameters/forward voltage: 1.3 V
Technical parameters/reverse recovery time: 150 ns
Technical parameters/Maximum reverse voltage (Vrrm): 200 V
Technical parameters/forward current: 1 A
Technical parameters/maximum reverse leakage current (Ir): 5 uA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-213AB
External dimensions/packaging: DO-213AB
Other/Minimum Packaging: 5000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYM11-1000-E3/97
|
VISHAY | 完全替代 | DO-213AB |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
BYM11-800-E3/96
|
VISHAY | 完全替代 | DO-213AB |
整流器 1.0 Amp 800 Volt
|
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