Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 230 W
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 75A
Technical parameters/rise time: 185 ns
Technical parameters/Input capacitance (Ciss): 8840pF @25V(Vds)
Technical parameters/rated power (Max): 230 W
Technical parameters/descent time: 226 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
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N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
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N沟道75V - 0.0095ヘ - 80A - TO- 220 - TO- 220FP - D2PAK STripFET⑩ II功率MOSFET N-channel 75V - 0.0095ヘ - 80A - TO-220 - TO-220FP - D2PAK STripFET⑩ II Power MOSFET
|
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