Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 237A
Technical parameters/rise time: 222 ns
Technical parameters/Input capacitance (Ciss): 10185pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 195 ns
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK962R8-30B
|
Philips | 功能相似 |
TrenchMOS(TM) logic level FET
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|||
BUK962R8-30B,118
|
NXP | 功能相似 | TO-263-3 |
MOSFET N-CH 30V 75A D2PAK
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