Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 4.8 mΩ
Technical parameters/dissipated power: 158 W
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP100NF04
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review