Technical parameters/dissipated power: 149 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 67 ns
Technical parameters/Input capacitance (Ciss): 2535pF @25V(Vds)
Technical parameters/rated power (Max): 149 W
Technical parameters/descent time: 35 ns
Technical parameters/dissipated power (Max): 149W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7635-100A
|
NXP | 功能相似 | D2PAK |
的TrenchMOS标准水平FET TrenchMOS standard level FET
|
||
BUK7635-100A,118
|
Nexperia | 类似代替 | TO-263-3 |
N沟道 VDS=100V VGS=±20V ID=41A P=149W
|
||
BUK7635-100A,118
|
NXP | 类似代替 | TO-263-3 |
N沟道 VDS=100V VGS=±20V ID=41A P=149W
|
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