Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 28 mΩ
Technical parameters/dissipated power: 166 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 3100pF @25V(Vds)
Technical parameters/rated power (Max): 166 W
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 166W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7528-100A
|
Nexperia | 类似代替 | TO-220-3 |
的TrenchMOS晶体管标准水平FET TrenchMOS transistor Standard level FET
|
||
BUK7528-100A,127
|
Nexperia | 类似代替 | TO-220-3 |
MOSFET N-CH 100V 47A TO220AB
|
||
BUK7528-100A,127
|
NXP | 类似代替 | TO-220-3 |
MOSFET N-CH 100V 47A TO220AB
|
||
BUK7528-100A127
|
NXP | 功能相似 | SOT78A |
Mosfet n-Ch 100V 47A Sot78 - Buk7528-100A, 127
|
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