Technical parameters/dissipated power: 157 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 2891pF @25V(Vds)
Technical parameters/rated power (Max): 157 W
Technical parameters/descent time: 19 ns
Technical parameters/dissipated power (Max): 157W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 | TO-220-3 |
TrenchMOS standard level FET
|
||
BUK7526-100B
|
NXP | 功能相似 | TO-220 |
TrenchMOS standard level FET
|
||
BUK7526-100B,127
|
NXP | 功能相似 | TO-220-3 |
MOSFET N-CH 100V 49A TO220AB
|
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