Technical parameters/rated voltage (DC): 49.0 V
Technical parameters/rated current: 1.70 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 6.5 mΩ
Technical parameters/dissipated power: 300 W
Technical parameters/input capacitance: 4.80 nF
Technical parameters/gate charge: 232 nC
Technical parameters/drain source voltage (Vds): 49 V
Technical parameters/leakage source breakdown voltage: 49 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/rise time: 37 ns
Technical parameters/Input capacitance (Ciss): 4800pF @25V(Vds)
Technical parameters/descent time: 36 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-220-7
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 15.65 mm
External dimensions/packaging: TO-220-7
Physical parameters/operating temperature: -40℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: MOSFET with temperature sensor
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
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