Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/drain source resistance: 6.50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 285 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 125 ns
Technical parameters/Input capacitance (Ciss): 3200pF @25V(Vds)
Technical parameters/rated power (Max): 285 W
Technical parameters/descent time: 57 ns
Technical parameters/dissipated power (Max): 285W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUFA75344S3S
|
ON Semiconductor | 功能相似 | TO-263-3 |
75A ， 55V ， 0.008 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
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