Technical parameters/rated power: 50 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0042 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 16A
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 2800pF @15V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 3.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.1W (Ta), 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PG-TSDSON-8
External dimensions/length: 3.3 mm
External dimensions/width: 3.3 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: PG-TSDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Portable Equipment, Motor Drive&Control, Mainboard, Motor Drive&Control, Computers&Computer Peripherals, Computers and Computer Peripherals, LED Lighting, Onboard Charger, VRD/VRM, Power Management, Light Emitting Diode Lighting, Portable Devices, Consumer Electronics, Power Management, Consumer Electronics
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ON Semiconductor | 功能相似 | QFN |
N沟道MOSFET PowerTrench® 25 V ， 40 A ， 5.7英里© N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ
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