Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 10 Ω
Technical parameters/dissipated power: 830 mW
Technical parameters/input capacitance: 25 pF
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Input capacitance (Ciss): 40pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 830mW (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BST82,215
|
Nexperia | 类似代替 | SOT-23-3 |
Nexperia Si N沟道 MOSFET BST82,215, 190 mA, Vds=100 V, 3引脚 SOT-23 (TO-236AB)封装
|
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