Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1300 mW
Technical parameters/breakdown voltage (collector emitter): 200 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 30 @50mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 30 @50mA, 10V
Technical parameters/rated power (Max): 1.3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF623
|
NXP | 功能相似 | SOT-89-3 |
高电压晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BF623
|
Philips | 功能相似 | SOT-89 |
高电压晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BST15
|
NXP | 功能相似 | SOT-89 |
PNP型高压晶体管 PNP high-voltage transistors
|
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