Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1.3 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Jiangsu Changjiang Electronics Technology | 类似代替 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
|||
BST52
|
NXP | 类似代替 | SOT-89 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
||
BST52
|
Central Semiconductor | 类似代替 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
|||
|
BST52
|
Zetex | 类似代替 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
|||
|
BST52
|
GMR Semiconductor | 类似代替 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
|||
BST52
|
Nexperia | 类似代替 | UPAK |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
||
BST52,115
|
NXP | 功能相似 | SOT-89-3 |
NXP BST52,115 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 1000 hFE
|
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