Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1000 mW
Technical parameters/gain bandwidth product: 15 MHz
Technical parameters/breakdown voltage (collector emitter): 200 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/Maximum current amplification factor (hFE): 30 @50mA, 10V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFN19
|
Siemens Semiconductor | 功能相似 |
PNP硅高压晶体管 PNP Silicon High-Voltage Transistors
|
|||
BST15
|
NXP | 功能相似 | SOT-89 |
PNP型高压晶体管 PNP high-voltage transistors
|
||
BST16
|
Zetex | 功能相似 |
BST16 PNP三极管 -350V -200mA/-0.2A 15MHz 30~120 -750mV/-0.75V SOT-89/SC-62 marking/标记 BT2 开关/放大
|
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