Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.9 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 830 mW
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.32A
Technical parameters/Input capacitance (Ciss): 38pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.31 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Audio, Automotive, Automotive, Industrial, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
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FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
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CJ | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
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2N7002KW
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UTC | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
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2N7002KW
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LiteOn | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
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