Technical parameters/rated voltage (DC): -300 V
Technical parameters/rated current: -1.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.5 mW
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 30 @50mA, 10V
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.57 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 | SOT-223 |
Transistor
|
||
BCP55-10
|
Philips | 功能相似 | SOT-223 |
Transistor
|
||
KSH32C
|
Fairchild | 功能相似 | DPAK |
Power Bipolar Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review