Technical parameters/rated power: 30 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0038 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 30 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 18A
Technical parameters/rise time: 3.8 ns
Technical parameters/Input capacitance (Ciss): 870pF @15V(Vds)
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 30W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PG-TDSON-8
External dimensions/packaging: PG-TDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: VRD/VRM, Onboard charger, Mainboard
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ON Semiconductor | 功能相似 | QFN-56 |
PowerTrench® SyncFET™ MOSFET，Fairchild Semiconductor 设计用于尽量减少功率转换的损耗，同时保持极佳的切换性能 高性能通道技术，RDS（接通）极低 SyncFET™ 得益于高效的肖特基主体二极管 应用：同步整流直流-直流转换器、电动机驱动器、网络负载点低侧开关 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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