Technical parameters/rated power: 48 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0022 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 48 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 24A
Technical parameters/rise time: 5.2 ns
Technical parameters/Input capacitance (Ciss): 1700pF @15V(Vds)
Technical parameters/descent time: 3.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TDSON-8
External dimensions/length: 5.9 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.27 mm
External dimensions/packaging: TDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: VRD/VRM, Onboard charger, Industrial, Power Management, Mainboard, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSC050NE2LS
|
Infineon | 功能相似 | PG-TDSON-8 |
INFINEON BSC050NE2LS 晶体管, MOSFET, N沟道, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V
|
||
BSC077N12NS3G
|
Infineon | 完全替代 | 120 |
120V,98A,N沟道功率MOSFET
|
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