Technical parameters/dissipated power: 0.625 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/dissipated power (Max): 625mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BS270_D74Z
|
Fairchild | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR BS270_D74Z 晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
BS270_D74Z
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BS270_D74Z 晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
BS270_D74Z
|
Vishay Siliconix | 功能相似 | TO-236-3 |
FAIRCHILD SEMICONDUCTOR BS270_D74Z 晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review