Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 120 mA
Technical parameters/drain source resistance: 30.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 120 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape, Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BS250P
|
Zetex | 功能相似 | TO-92-3 |
BS250P 袋装
|
||
BSS123TA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
|
||
ZVN4206A
|
Zetex | 功能相似 | TO-92-3 |
ZVN4206A 系列 60 V 1 Ohm N 沟道 增强模式 垂直 DMOS FET - TO-92
|
||
ZVN4206A
|
Diodes Zetex | 功能相似 | TO-92-3 |
ZVN4206A 系列 60 V 1 Ohm N 沟道 增强模式 垂直 DMOS FET - TO-92
|
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