Technical parameters/drain source resistance: 9 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2W (Ta), 40W (Tc)
Technical parameters/threshold voltage: -2.6V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): -78A
Technical parameters/rise time: 360 ns
Technical parameters/Input capacitance (Ciss): 13200pF @20V(Vds)
Technical parameters/descent time: 680 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2W (Ta), 40W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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