Technical parameters/frequency: 860 MHz
Technical parameters/output power: 2.5 W
Technical parameters/gain: 22.8 dB
Technical parameters/test current: 15 mA
Technical parameters/Input capacitance (Ciss): 3.4pF @0V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 104 V
Technical parameters/power supply voltage: 50 V
Package parameters/number of pins: 12
Encapsulation parameters/Encapsulation: VDFN-12
External dimensions/packaging: VDFN-12
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLP10H603Z
|
Ampleon USA | 完全替代 | VDFN-12 |
RF Power Transistor, 0.01 to 1.4GHz, 2.5W, 22.8dB, 50V, SOT1352-1, LDMOS
|
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