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Model BLS6G2933S-130,112
Description Bls6g2933s-130 - Ldmos sFrequency band radar power transistor
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Brand: NXP
Packaging SOT-922-1
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5897) Minimum order quantity(1)
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Technical parameters/drain source resistance: 135 mΩ

Technical parameters/threshold voltage: 1.8 V

Technical parameters/leakage source breakdown voltage: 60 V

Technical parameters/output power: 130 W

Technical parameters/gain: 12.5 dB

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-922-1

External dimensions/packaging: SOT-922-1

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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