Technical parameters/frequency: 2.14 GHz
Technical parameters/output power: 10 W
Technical parameters/gain: 16 dB
Technical parameters/test current: 110 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 65 V
Technical parameters/power supply voltage: 28 V
Package parameters/number of pins: 12
Encapsulation parameters/Encapsulation: VDFN-12
External dimensions/packaging: VDFN-12
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLP7G22-10Z
|
NXP | 类似代替 | 12 |
RF Power Transistor, 0.7 to 2.2GHz, 10W, 27dB, 28V, LDMOS, SOT1179-1
|
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