Technical parameters/frequency: 2.5GHz ~ 2.7GHz
Technical parameters/output power: 25 W
Technical parameters/gain: 17 dB
Technical parameters/test current: 900 mA
Technical parameters/operating temperature (Max): 225 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 65 V
Technical parameters/power supply voltage: 28 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-502
External dimensions/packaging: SOT-502
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF8G27LS-100J
|
NXP | 完全替代 |
RF Power Transistor, 2.5 to 2.7GHz, 100W, 17dB, 28V, SOT502B, LDMOS
|
|||
BLF8G27LS-100J
|
Ampleon USA | 完全替代 | SOT-502 |
RF Power Transistor, 2.5 to 2.7GHz, 100W, 17dB, 28V, SOT502B, LDMOS
|
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