Technical parameters/frequency: 22000 MHz
Technical parameters/number of pins: 4
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 54 mW
Technical parameters/breakdown voltage (collector emitter): 4.5 V
Technical parameters/gain: 21 dB
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 50
Technical parameters/rated power (Max): 54 mW
Technical parameters/DC current gain (hFE): 80
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 54 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-343
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-343
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFU610F,115
|
NXP | 类似代替 | SOT-343 |
BFU610 系列 5.5 V 26 dB 增益 NPN 宽带 硅 射频 晶体管 - SOT-343F-4
|
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