Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/minimum current amplification factor (hFE): 60 @5mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 60
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: TO-253-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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NXP | 功能相似 | SOT-143 |
BFG505/X NPN三极管 20V 18mA 9Ghz 120~250 SOT-143 marking/标记 WMK 高功率增益 低噪声系数
|
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