Technical parameters/working voltage: 900 mV
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 360 mW
Technical parameters/clamp voltage: 28 V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 21 V
Technical parameters/peak pulse power: 40 W
Technical parameters/minimum reverse breakdown voltage: 19 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: TO-236
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Audio, Automotive, Imaging, Consumer Electronics, Portable Devices, Computers & Computer Peripherals, Video & Vision
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBZ20VAL,215
|
NXP | 完全替代 | SOT-23-3 |
MMBZ10VAL 系列 17 V 65 pF 单向 双通道 ESD 保护 二极管 - SOT23
|
||
MMBZ20VAL,215
|
Nexperia | 完全替代 | SOT-23-3 |
MMBZ10VAL 系列 17 V 65 pF 单向 双通道 ESD 保护 二极管 - SOT23
|
||
|
|
Rochester | 功能相似 | CASE 318-08 |
On Semiconductor 共阳配置中的双表面安装瞬态电压抑制器 特别适用于自动插入 低泄漏
|
||
MMBZ20VALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
On Semiconductor 共阳配置中的双表面安装瞬态电压抑制器 特别适用于自动插入 低泄漏
|
||
|
|
Motorola | 功能相似 |
On Semiconductor 共阳配置中的双表面安装瞬态电压抑制器 特别适用于自动插入 低泄漏
|
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