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Model BSM150GB120DN2
Description IGBT The Infineon * * Infineon * * series IGBT modules provide low switching losses for switching frequencies up to 60 kHz. IGBT spans a series of power modules, such as ECONOPACK package, with open collector emitter voltage at 1200V; PrimePACK IGBT half bridge chopper module with NTC up to 1600/1700V. PrimePACK IGBT can be found in industrial, commercial, construction, and agricultural vehicles. The N-channel TRENCHSTOP TM and Fieldstop IGBT modules are suitable for both hard switching and soft switching applications, such as inverters, UPS, and industrial drives. Package types include: 62mm module, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 # # # IGBT discrete parts and modules, Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
Product QR code
Brand: Infineon
Packaging 62MM-1
Delivery time
Packaging method
Standard packaging quantity 1
936.3  yuan 936.3yuan
1+:
$ 1067.3843
10+:
$ 1029.9322
50+:
$ 1025.2507
100+:
$ 1020.5692
150+:
$ 1013.0788
250+:
$ 1006.5247
500+:
$ 999.9705
1000+:
$ 992.4801
Quantity
1+
10+
50+
100+
150+
Price
$1067.3843
$1029.9322
$1025.2507
$1020.5692
$1013.0788
Price $ 1067.3843 $ 1029.9322 $ 1025.2507 $ 1020.5692 $ 1013.0788
Start batch production 1+ 10+ 50+ 100+ 150+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3075) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.25 kW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 1.25 kW

Encapsulation parameters/installation method: Screw

Package parameters/number of pins: 7

Encapsulation parameters/Encapsulation: 62MM-1

External dimensions/length: 106.4 mm

External dimensions/width: 61.4 mm

External dimensions/height: 30 mm

External dimensions/packaging: 62MM-1

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSM100GB120DN2 BSM100GB120DN2 Infineon 功能相似 Half Bridge2
IGBT功率模块（半桥包括快速续流二极管封装用绝缘金属基板） IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
PDF
BSM100GB120DN2K BSM100GB120DN2K Infineon 功能相似 34MM-1
IGBT功率模块（半桥包括快速续流二极管封装用绝缘金属基板） IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
BSM200GA120DN2 BSM200GA120DN2 Infineon 功能相似 62MM
IGBT 模块，Infineon **Infineon 封装类型包括：62mm 模块、EasyPACK、EconoPACKTM IGBT 分立件和模块，Infineon 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
PDF
FZ400R12KS4 FZ400R12KS4 Infineon 功能相似 AG-62MM-2
62毫米C系列模块，具有快速IGBT2高频开关 62mm C-Series module with the fast IGBT2 for high-frequency switching

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