Technical parameters/rated current: 25 mA
Technical parameters/breakdown voltage: -25.0 V
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: 25 V
Technical parameters/breakdown voltage of gate source: 25 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 25 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF861A
|
Philips | 功能相似 |
N沟道FET的结 N-channel junction FETs
|
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BF861A,215
|
NXP | 类似代替 | SOT-23-3 |
N 通道 JFET,NXP ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
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