Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 12A
Technical parameters/minimum current amplification factor (hFE): 750 @5A, 3V
Technical parameters/rated power (Max): 30 W
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.16 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.19 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BDW94CFP
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS BDW94CFP 单晶体管 双极, 达林顿, PNP, 100 V, 33 W, -12 A, 1000 hFE
|
||
BDW94CFTU
|
ST Microelectronics | 类似代替 | TO-220F-3 |
Darlington PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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