Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -10.0 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 1000 @5A, 4V
Technical parameters/rated power (Max): 125 W
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.2 mm
External dimensions/width: 4.9 mm
External dimensions/height: 12.2 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BDW83C
|
Comset Semiconductors | 功能相似 |
互补硅功率达林顿晶体管 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
|||
BDW83C
|
Poinn | 功能相似 |
互补硅功率达林顿晶体管 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
|||
TIP147G
|
ON Semiconductor | 类似代替 | TO-247-3 |
ON SEMICONDUCTOR TIP147G 单晶体管 双极, PNP, -100 V, 125 W, -10 A, 500 hFE 新
|
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