Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 20A
Technical parameters/minimum current amplification factor (hFE): 20 @5A, 4V
Technical parameters/rated power (Max): 3.5 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-218-3
External dimensions/packaging: TO-218-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
D45C8
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON Semiconductor D45C8 , PNP 晶体管, 4 A, Vce=60 V, HFE:20, 32 MHz, 3引脚 TO-220封装
|
||
D45C8
|
Fairchild | 功能相似 | TO-220-3 |
ON Semiconductor D45C8 , PNP 晶体管, 4 A, Vce=60 V, HFE:20, 32 MHz, 3引脚 TO-220封装
|
||
KSC2073
|
Freescale | 功能相似 |
Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
|
|||
KSC2073
|
ON Semiconductor | 功能相似 |
Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
|
|||
KSE340
|
ON Semiconductor | 功能相似 |
Power Bipolar Transistor
|
|||
KSE340
|
Fairchild | 功能相似 | SIP |
Power Bipolar Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review