Technical parameters/frequency: 3 MHz
Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -4.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 36 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 40 @500mA, 1V
Technical parameters/rated power (Max): 36 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 36000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/packaging: TO-126-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Transys Electronics | 完全替代 |
塑料中功率硅PNP晶体管 Plastic Medium Power Silicon PNP Transistor
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|
Secos | 完全替代 |
塑料中功率硅PNP晶体管 Plastic Medium Power Silicon PNP Transistor
|
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|
Continental Device | 完全替代 | SIP |
塑料中功率硅PNP晶体管 Plastic Medium Power Silicon PNP Transistor
|
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BD442
|
Fairchild | 完全替代 |
塑料中功率硅PNP晶体管 Plastic Medium Power Silicon PNP Transistor
|
|||
BD442STU
|
ON Semiconductor | 功能相似 | TO-126 |
Trans GP BJT PNP 80V 4A 3Pin(3+Tab) TO-126 Rail
|
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