Technical parameters/frequency: 3 MHz
Technical parameters/rated power: 75 W
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 75 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 12A
Technical parameters/minimum current amplification factor (hFE): 15 @4A, 4V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 75 W
Technical parameters/DC current gain (hFE): 120
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 75 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6128
|
Microsemi | 功能相似 | TO-61 |
TO-61 NPN 80V 10A
|
||
BD137-10
|
CDIL | 功能相似 |
1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
|
|||
|
|
Infineon | 功能相似 | TO-126 |
1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
|
||
|
BD137-10
|
Fairchild | 功能相似 |
1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
|
|||
|
BD137-10
|
NXP | 功能相似 | SIP |
1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
|
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