Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/minimum current amplification factor (hFE): 20 @5A, 4V
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6488G
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR 2N6488G 单晶体管 双极, 通用, NPN, 80 V, 5 MHz, 40 W, 15 A, 5 hFE
|
||
2N6488G
|
Motorola | 功能相似 |
ON SEMICONDUCTOR 2N6488G 单晶体管 双极, 通用, NPN, 80 V, 5 MHz, 40 W, 15 A, 5 hFE
|
|||
|
BD743B
|
Bourns J.W. Miller | 功能相似 | TO-220 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
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