Technical parameters/polarity: NPN
Technical parameters/dissipated power: 125 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 25A
Technical parameters/minimum current amplification factor (hFE): 10 @15A, 4V
Technical parameters/rated power (Max): 3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-218-3
External dimensions/length: 15.2 mm
External dimensions/width: 4.9 mm
External dimensions/height: 12.2 mm
External dimensions/packaging: TO-218-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD249
|
Poinn | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
|||
BD249
|
Inchange Semiconductor | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review