Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 15
Technical parameters/rated power (Max): 30 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 30 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 9.9 mm
External dimensions/width: 4.5 mm
External dimensions/height: 15.7 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD239B
|
Poinn | 功能相似 |
中功率线性和开关应用 Medium Power Linear and Switching Applications
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BD239B
|
Advanced Semiconductor | 功能相似 |
中功率线性和开关应用 Medium Power Linear and Switching Applications
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BD239B
|
Fairchild | 功能相似 | TO-220 |
中功率线性和开关应用 Medium Power Linear and Switching Applications
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