Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 2.00 A
Technical parameters/dissipated power: 30 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 15 @1A, 4V
Technical parameters/rated power (Max): 30 W
Technical parameters/dissipated power (Max): 30000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD243CG
|
ON Semiconductor | 功能相似 | TO-220-3 |
NPN 功率晶体管，ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
||
TIP29CG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR TIP29CG. 射频双极晶体管
|
||
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR TIP31CG 单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 40 W, 3 A, 10 hFE
|
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