Technical parameters/frequency: 150 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 2 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/packaging: SOT-89
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX5210TA
|
Diodes Zetex | 类似代替 | TO-243 |
双极晶体管 - 双极结型晶体管(BJT) Pwr Mid Perf Transistor SOT89 T&R; 1K
|
||
BCX5210TA
|
Diodes | 类似代替 | SOT-89 |
双极晶体管 - 双极结型晶体管(BJT) Pwr Mid Perf Transistor SOT89 T&R; 1K
|
||
FMMT593TA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Medium Power
|
||
FMMT593TA
|
Diodes | 功能相似 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Medium Power
|
||
FMMT593TA
|
Zetex | 功能相似 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Medium Power
|
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