Technical parameters/frequency: 250 MHz
Technical parameters/rated voltage (DC): -45.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 330 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 380
Technical parameters/Maximum current amplification factor (hFE): 630
Technical parameters/rated power (Max): 330 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC807-40LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC807-40LT3G Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 40 hFE 新
|
||
BCX71KE6327HTSA1
|
Infineon | 类似代替 | SOT-23-3 |
BCX71 系列 PNP 45 V 100 mA 表面贴装 硅 AF 晶体管 - SOT-23-3
|
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