Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 300 mW
Technical parameters/rated voltage: 30 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: TO-253-4
Physical parameters/materials: Silicon
Other/Product Lifecycle: Last Time Buy
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: current mirror
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCV61BE6327HTSA1
|
Infineon | 完全替代 | TO-253-4 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review