Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Physical parameters/materials: Silicon
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Philips | 类似代替 | SOT-223 |
NXP BCP55-16 单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 100 hFE
|
||
|
|
ST Microelectronics | 类似代替 | SOT-223-4 |
NXP BCP55-16 单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 100 hFE
|
||
BCP55-16
|
Diotec Semiconductor | 类似代替 |
NXP BCP55-16 单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 100 hFE
|
|||
BCP55-16
|
Infineon | 类似代替 | SOT-223-4-10 |
NXP BCP55-16 单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 100 hFE
|
||
BCP55-16
|
SLKOR. | 类似代替 | SOT-223 |
NXP BCP55-16 单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 100 hFE
|
||
BCP5516E6327HTSA1
|
Infineon | 完全替代 | SOT-223 |
SOT-223 NPN 60V 1A
|
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