Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 | SOT-223 |
通用 NPN 晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BCP55-10
|
Philips | 功能相似 | SOT-223 |
通用 NPN 晶体管,Nexperia ### 双极晶体管,Nexperia
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||
|
|
Philips | 功能相似 | SOT-223 |
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
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|
ST Microelectronics | 功能相似 | SOT-223-4 |
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
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BCP55-16
|
Diotec Semiconductor | 功能相似 |
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
|
|||
BCP55-16
|
Infineon | 功能相似 | SOT-223-4-10 |
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
|
||
BCP55-16
|
SLKOR. | 功能相似 | SOT-223 |
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
|
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